| 학회 |
한국화학공학회 |
| 학술대회 |
2003년 가을 (10/24 ~ 10/25, 한양대학교) |
| 권호 |
9권 2호, p.2791 |
| 발표분야 |
재료 |
| 제목 |
Recovery of Electrical Properties by Surface Treatment after Mesa Etching in InGaN/GaN Multiple Quantum Well Light Emitting Diodes |
| 초록 |
To recover electrical properties of an InGaN/GaN multiple quantum well lighting emitting diode after mesa etching by Inductively Coupled Plasma (ICP), a surface treatment using ultrasonically BOE and ammonium sulfide (NH4) 2Sx has been performed. After the surface treatment, surface smoothness of p-GaN and n-GaN layers was improved, and the operating voltage (Vop). It was found that an increase in roughness of the n-GaN layer increases the operating voltage (Vop), but that of the p-GaN layer decreases Vop. This is because an increase in the surface roughness decreases the contact resistance between metal and GaN layers in the p-GaN layer, but it increases resistance due to an increase of current path in the n-GaN layer. |
| 저자 |
강형곤1, 최락준2, 한명수3, 윤창주1, 한윤봉2
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| 소속 |
1전북대 반도체 물성(연), 2전북대 화학공학과, 3전북대 반도체과학기술학과 |
| 키워드 |
Surface Treatment; mesa etching; InGaN/GaN Quantum Well Light Emitting Diode |
| E-Mail |
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| 원문파일 |
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