| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 가을 (10/07 ~ 10/08, 대구 EXCO) |
| 권호 |
35권 2호 |
| 발표분야 |
분자전자소재 및 소자 |
| 제목 |
Low-temperature Fabrication of the High-mobility, Low-voltage ZnO Transistors |
| 초록 |
Low voltage, high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) have been realized by using the ion gel gate dielectric, a mixture of ionic liquid and triblock copolymer. The ion gel gated solution-processed ZnO TFTs is found to exhibit excellent electrical properties; the carreir mobilities of ~ 13 cm2/Vs, ON/OFF current ratios of ~ 105, and threshold voltages of ~ 1 V, at relatively low, 300°C, the sintering temperature of ZnO thin films. The high capacitance ion gel gate dielectrics ( ~ 5 F/cm2) can accumulate ultrahigh density charge carriers enough to fill the disorder-induced traps in ZnO film fabricated at moderate temperature of 280 °C. Furthermore, ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics. |
| 저자 |
봉효진1, 이위형1, 이동윤1, 조정호2, 조길원1
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| 소속 |
1POSTECH, 2숭실대 |
| 키워드 |
ZnO; transistor; Ion-gel; TFT; FET
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| E-Mail |
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