| 학회 | 한국재료학회 |
| 학술대회 | 2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 | 10권 2호 |
| 발표분야 | 반도체 II(화합물) |
| 제목 | FCM(4계수측정법)을 이용한 상변화메모리 재료의 전기적특성 측정 |
| 초록 | At nowadays and the near future, the high density and non-volatility are requiring properties of memory device. For the this purpose, many materials and investigations are argued, but I focused on the PCM(Phase Change Memory – chalcogenide Ge-Sb-Te system). Generally the PCM materials have been shown the high transition rate between the amorphous state and the crystalline state, and at this transition region the changes of properties are observed, for example resistivity, atomic structure, and reflexibility. Particularly the difference of resistivity between each state is used for the key of the PCM. Thus to understand the properties or the phenomena of PCM materials deeply, the considerations, which are related with resisivity, of the carrier motions in solids are needed. So I will introduce the FCM that is the measurement method to obtain the density of state effective mass with the four coefficients(resistivity, Hall, Seebeck, and Nernst) and these coefficients are the results of the carrier motion. And at the next sequence, I will refer the application of FCM in the PCM material. Briefly and consequently speaking, the density of state effective mass is represented as following numerical formula at the cubic and the parabolic E-k diagram. The σ is conductivity, RH is the Hall, α is the Seebeck, and Q is the Nernst. And the md* is defined as N2/3m*, where N is the number of Fermi surfaces. The FCM can measure directly density of state effective mass from four coefficients, and density of state effective mass represents the informations of energy diagram of a material. For example, the high value of density of state effective mass means the low curvature or many Fermi surfaces in the E-k diagram. |
| 저자 | 김성진, 강윤묵, 강민구, 김동환 |
| 소속 | 고려대 |
| 키워드 | FCM; PCM |
