| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Low Band Gap Ultra Flat Polymers for High Performance Ambipolar Thin Film Transistors |
| 초록 |
We investigated the performance of ambipolar thin film transistors (TFTs) based on low band gap ultra flat polymers. The polymers were co-polymerized by 3,6-bis(thieno[3,2-b]thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (TTDPP) units and benzo[c][1,2,5]thiadiazole (BT) units to synthesize pTTDPP-BT polymer or by TTDPP units and 5,6-difluorobenzo[c][1,2,5]thiadiazole (DFBT) units to yield pTTDPP-DFBT polymer. DFT calculations revealed that all the dihedral angles of the polymer backbones were zero. The HOMO level of pTTDPP-BT polymer is -5.34 eV and that of pTTDPP-DFBT polymer is -5.40 eV. pTTDPP-BT TFT devices showed an excellent ambipolar behavior with hole and electron mobilities of 0.14 and 0.52 cm2 V−1 s−1, respectively, upon 200 oC-annealing. pTTDPP-DFBT TFT devices also exhibited a similar behavior with hole and electron mobility of 0.014 and 0.048 cm2 V−1s−1, respectively. We attributed these lower mobilities to the lower molecular weight of pTTDPP-DFBT polymer. |
| 저자 |
최종용1, 윤영운2, 신나라1, 옥주원1, 정혜승1, 조정호3, 강영종4, 김봉수2
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| 소속 |
1한국과학기술(연), 2한양대, 3이화여자대, 4성균관대 |
| 키워드 |
Thin Film Transistors; backbone planality; low band gap polymer; carrier mobility
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| E-Mail |
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