| 초록 |
Plasma enhanced chemical vapor deposition (PECVD) using a mixture of decahydronaphthalene (DHN) and tetraethylorthosilicate (TEOS) as precursors was used to deposit low dielectric constant organic/inorganic hybrid plasma polymer thin films. The films were referred to as a-SiOC:H. The main deposition parameter was the plasma power, which was varied from 30 to 90 W. Properties of a-SiOC:H thin films were dependent significantly upon the R.F. power. As the deposition power increased, except for the film deposited at 70 W, the relative dielectric constant k decreased, thermal stability degraded, and leakage current decreased. The a-SiOC:H thin film deposited at 70W showed the minimum k value, the poorest thermal stability, and the minimum leakage current among the SiOC:H films deposited with the R.F. power of 30, 50, 70, and 90 W. Fourier transform infrared absorption analysis revealed that as the content of CH3- and CH2-related species increases and the content of Si-O(C)-related species decreases in a-SiOC:H films. |
