| 초록 |
This study has led to the development of a new approach for fabricating ultrahigh resolution (ca. ＜ 20 nm) patterns of various shapes and high aspect ratios (ca. 15) over large areas. In this mechanism, target materials are etched and deposited onto the side surface of a prepatterned polymer by using low Ar ion bombarding energies, based on the angular distribution of target particles by ion-beam bombardment. This technique has several notable advantages. First, the simple processing procedure results in efficient formation of high-resolution (ca. 10 nm) patterns with high-aspect-ratios (ca. 15) over large-areas. Second, the technique can be applied to patterning most semiconducting, metallic, and dielectric materials, including Au, Pt, Cr, Al, ZnO, and SiO2. Finally, 3D nanostructures with complex topologies, such as hole-cylinder, cup- and triangle-cone shaped surfaces, can be easily fabricated by controlling feature of the polymer pattern. |
