| 초록 |
Most of the field-emission-based vacuum devices are on the basis of conventional Spindts process. However, it requires very complicate process and high cost equipment such as selective etching and electron beam lithography. Also high voltage is required for operating devices because inter-electrode distance is several hundred micrometers. In addition, it is difficult to apply to a large area. To overcome these difficulties, we have used anodic aluminum oxide(AAO) technology. This process is possible to control template dimensions in nanometer size easily such as pore diameter, length, and density without using electron beam lithography. We have fabricated integrate diode structure for the template based Ni nanowires as field emitters. The emission characteristics were affected by the aspect ratio of Ni nanowire. We observed the significant high current density at low operating voltage. To obtain the low operating voltage, interelectrode distance was diminished less than 500 nm. |
