| 학회 |
한국화학공학회 |
| 학술대회 |
2010년 가을 (10/21 ~ 10/22, 대전컨벤션센터) |
| 권호 |
16권 2호, p.2075 |
| 발표분야 |
재료 |
| 제목 |
The OTFTs including Soluble-based TiO2-PVP composite gate insulator for low operating voltage |
| 초록 |
We introduce the TiO2-PVP composite dielectric materials for OTFTs in order to operate at low voltage. The gate insulator with TiO2-PVP composite materials were fabricated by solution process, such as spin coating. Because of TiO2 precursor, it composites well in cross-linked PVP, the composite materials are appropriate for solution process and have enhanced the dielectric constant of gate insulator. We manufactured the OTFTs with pentacene as semiconducting layer, which was improved field-induced current than that of conventional transistors including polymer (PVP) dielectric layer due to TiO2-PVP composite gate insulator with rather increased dielectric constant. The OTFTs, including TiO2 materials in gate insulator, show the performance of transistor with low threshold voltage and enhanced on/off ratio in low operating forward bias. |
| 저자 |
김주희, 김경준, 유승철, 박시윤, 이지현, 정성윤, 조한주, 김연상
|
| 소속 |
서울대 |
| 키워드 |
OTFTs; high K materials; low-operating voltage; polymer gate insulator; organic-inorganic hybrid materials
|
| E-Mail |
|
| 원문파일 |
초록 보기 |
