| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | 4H-SiC epilayer growth by hot-wall CVD |
| 초록 | Silicon carbide is the most promising wide band-gap semiconductor material for high power and high frequency devices due to its superior electrical and mechanical properties and , as a result, its predominance in high power devices is well established. Most of all, the advanced single crystal growth technique for SiC gives it a competitive edge over other wide band-gap semiconductor materials. Among the many polytypes of SiC, most recent works have focused on 4H-SiC, due to the high saturated electron drift velocity and commercial availability. However, despite the recent progress in SiC epitaxial and bulk growth techniques, one major drawback in SiC CVD is its relatively low growth rate. For wide applications of SiC electronic devices, a higher throughput is required in SiC epitaxial growth. A high throughput will be attained by increasing the growth rate or the capacity of loaded wager, or both. In this paper, the authors describe the 4H-SiC epitaxial layer growth by hot-wall CVD at 1500oC in horizontal reactor. The design of hot-wall susceptor and the simulation of temperature profile is presented. And growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3μm/h which is three times higher than that of cold-wall CVD in our laboratory. A very low back ground doping level of mid 1015/cm3 was achieved without SiC coating of graphite susceptor . |
| 저자 | 서한석, 송호근, 김형준 |
| 소속 | 서울대 |
| 키워드 | Silicon carbide; hot-wall CVD; horizontal reactior |
