화학공학소재연구정보센터
학회 한국재료학회
학술대회 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔)
권호 27권 2호
발표분야 G. 나노/박막 재료 분과
제목 MoS2 as an interfacial layer for Remote epitaxial growth of ZnO on GaN
초록 The remote epitaxy through the 2-dimensional (2D) nanomaterial has offered insight into crystallinity interactions and interfacial properties between materials. However, the systematic investigation on the effects of transition metal dichalcogenides (TMDC) as an interfacial layer has been barely conducted. In this work, we employed monolayer MoS2 as the interfacial material and investigated the remote epitaxial growth behaviors between GaN substrates and ZnO films/rods. It is confirmed the epitaxial properties between ZnO and MoS2 by observing the atomic arrangement of the thin film using Transmission electron microscopy (TEM). In addition, we compared the structural differences of ZnO rods through MoS2 between the Si/SiO2 substrate and GaN substrate. The results show that the weak van der Waals force of monolayer MoS2 cannot completely screen the substrates below 2D materials from the ZnO seed layer, and the relationship between epilayer and substrate can be maintained.
저자 김민주, 장수희, 최원영, 김예림, 박원일
소속 한양대
키워드 <P>Remote epitaxy; Van der Waals force; TMDC; MoS<SUB>2</SUB>; 2D material</P>
E-Mail wipark@hanyang.ac.kr