| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Enhanced performance of MoS2 thin-film transistors encapsulated with photoresist |
| 초록 |
Unlike graphene, the existence of direct band gaps in transition metal dichalcogenides such as MoS2 offers an attractive possibility of using MoS2 in field-effect transistors (FETs). However, as MoS2 channel is vulnerable to oxygen and moisture exposure degrading device performance, encapsulation has been suggested as a strategy to prevent the absorption of oxygen, moisture and other contaminants. Previous encapsulation using high-k dielectrics such as Al2O3 and HfO2 requires complex vacuum process and relatively long process time. In this work, we investigate a simple and efficient process to encapsulate MoS2 TFTs using AZ® photoresist for the first time. With the AZ® photoresist encapsulation, we observed improved device performance including increased field-effect mobility, reduced subthreshold slope, and increased on/off-current ratio. The negative shift of the threshold voltage suggested n-type doping by the encapsulation with AZ® photoresist. Observed n-doping is attributed to the electropositive hydroxyl groups in AZ® photoresist encapsulation donating electrons to underlying MoS2. These results demonstrate that the encapsulation using AZ® photoresist is a simple and efficient method of improving device performance of MoS2 TFTs and other two-dimensional electronic devices. |
| 저자 |
Hyeyeon Sunwoo1, Minji Kang2, Woong Choi1
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| 소속 |
1School of Materials Science & Engineering, 2Kookmin Univ. |
| 키워드 |
photoresist encapsulation; MoS<SUB>2</SUB>; transition metal dichalcogenides; thin-film transistors
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| E-Mail |
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