| 초록 |
In this work, we fabricated petancene based organic thin-film transistors (OTFTs) on the ITO coated glass and Si substrates. We also used polymide and SiO2 as gate insulator. In order to clarify the relation between the rubbing effect and the electrical properites, top-contact OTFT devices with current flow perpendicular and parallel to the rubbing direction were fabricated. In addition, non-rubbed PI layer was fabricated for the comparison. Then, we passivated it with Al or polyvinyalcohol (PVA) layer. The OTFTs with and without passivation layers were stored in the ambient air, and the characteristics was measured with time. We found there is the decrease of field-effect mobility but increase toward the negative direction of threshold voltage(VT). We used various designs of source and drain electrodes with channel lengths of 50, 100, and 150 ㎛, and channel widths of 1000 and 2000 ㎛, respectively. |
