| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Synthesis and characterization of Cu2Sn1-xGexS3 (CTGS) thin film solar cell deposited by sulfurizing sputtered metallic precursors |
| 초록 |
Cu2Sn1-xGexS3 (CTGS) thin films are prepared by sulfurization of sputtered stacked precursors using rapid thermal annealing (RTA) system under the different pressures. Influence of sulfurization pressure on the compositional, structural. Morphological and optical properties of Cu2Sn1-xGexS3 (CTGS) thin films have been investigated in detail. the properties of CTGS thin films are found to be strongly dependent on the sulfurization pressure. It is observed that CTGS films annealed under lower sulfurization pressure exhibit nanocrystalline microstructure with smaller grain size with S-poor composition, whereas CTGS films annealed under high sulfurization pressure showed improved microstructure with large grains and sufficient amount of sulfur in the absorber layer. XRD studies revealed the formation of tetragonal phase in all CTGS thin films along with the presence of extra secondary phases. The highest power conversion efficiency (PCE) of 0.61% (Voc = 131 mV, Jsc= 14.13 mA/cm2, FF= 0.33) is obtained for CTGS absorber annealed under sulfurization pressure of 225 Torr. |
| 저자 |
He Mingrui1, 김인영2, 이주연1, 김진헉1
|
| 소속 |
1전남대, 2전기전자컴퓨터공학부 |
| 키워드 |
thin film; solar cell; sputtering
|
| E-Mail |
|
