| 초록 |
The electrical performance of metal oxide semiconductor based field-effect transistor (FET) improved by electrode-semiconductor charge injection layer with various n-type semiconductor. In comparison with the existing metal oxide FET with only aluminum electrode, the device performance has been considerably improved in gold, copper electrode device. This research expected more improve air stability, performance, and use low cost electrode in metal oxide semiconductor. We fabricated solution-process IGZO based field-effect transistor with top contact on SiO2 substrate, and solution-precess interlayer. |
