| 학회 |
한국재료학회 |
| 학술대회 |
2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 |
20권 2호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Electrical characterization of solution-processed indium-strontium-zinc-oxide thin-film transistors |
| 초록 |
Solution-processed oxide thin-film transistors (TFTs) fabricated by sol-gel method may allow realization of transparent and high performance electronic devices. Among the various oxide semiconductor materials, indium gallium zinc oxide (IGZO) has been widely investigated due to its high carrier mobility and reasonable stability. In this report, we investigate a new substitution material for gallium. Particularly, strontium was used instead of gallium and using a solution process oxide InSrZnO TFTs were fabricated. Here, the electrical properties of InSrZnO TFTs were characterized and in addition, compared with those of InGaZnO TFTs. |
| 저자 |
Woobin Lee1, Minkyung Lee2, Woonghee Byun3, Yong-Hoon Kim1
|
| 소속 |
1SKKU Advanced Institute of Nanotechnology (SAINT), 2Sungkyunkwan Univ., 3Korea |
| 키워드 |
strontium; thin-film transistor; oxide; InSrZnO; sol-gel
|
| E-Mail |
|
