| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | Unipolar and bipolar resistive switching of nonstoichiometric TiOx thin films |
| 초록 | As one of the resistive random access memory (ReRAM) materials, the effect of post annealing of the TiOx thin film was researched. 35-nm-thick TiOx thin films were deposited using rf magnetron sputtering system and annealed at various temperature from 0 to 800℃. To make metal-insulator-metal (MIM) structure, Pt was used as the top and bottom electrodes (TE and BE, respectively). In the composition of the TiOx film, nonstoichiometric TiOx films regardless of the annealing temperature (x ≈ 1.65) were observed. In case of an as-dep. TiOx sample and TiOx samples which were annealed up to 300℃, both unipolar resistive switching (URS) and bipolar resistive switching (BRS) were observed. And in case of TiOx samples which were annealed at 400℃ and 500℃, only BRS was observed regardless of applied voltage level. It is believed that the increase in the work function of the TiOx film after the annealing process brings about the decrease in the potential barrier height, and this change of Schottky barrier height have an effect on the electron transfer process. Above 600℃, moreover, the resistive switching characteristics was hardly observed and it is thought that the current path besides oxygen vacancies increased because the grain size and roughness of the TiOx film abruptly increased due to the crystallization, so the hysteresis depending on the voltage sweep vanished. |
| 저자 | 김완기, 이시우 |
| 소속 | 포항공과대 |
| 키워드 | RRAM; TiO2; resistive switching |
