| 초록 |
We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. Titania precursor and polyelectrolyte (PE) layers were alternately deposited onto platinum (Pt)-coated silicon substrates using electrostatic interactions. These multilayers were converted into nanolaminated TiO2 films after thermal annealing and the top electrode was coated onto the TiO2/PE multilayers to complete device fabrication. When an external bias was applied to the devices, switching phenomena independent of the voltage polarity (i.e., unipolar switching) were observed at low operating voltages (0.4 VRESET and 1.3 VSET) in comparison with those of conventional devices. The insertion of Pt nanoparticles (PtNP) within the TiO2/PE multilayers changes their switching phenomena from unipolar to bipolar switching, depending on the voltage polarity. Additionally, the further insertion of PtNP induces the metallic state in the devices. |
