| 학회 | 한국고분자학회 |
| 학술대회 | 2003년 가을 (10/10 ~ 10/11, 부경대학교) |
| 권호 | 28권 2호, p.190 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Top surface imaging by selective adsorption of silicon surfactants |
| 초록 | Patternwise exposure on the photoresist film produced carboxylic acid. Cationic silicon surfactant can be selectively adsorbed on carboxylate anion in photoresist film. Attached silicon surfactants have resistance against O2-reactive ion etching. As a result, positive patterns can be made. But, basic aqueous solution can dissolve the acidic photoresist. To prohibit this dissolution, we introduced crosslinkable groups, epoxide and hydroxy, in the photoresist and induced crosslinking reaction by heating. The crosslinked photoresist is not soluble in aqueous basic solution. Therefore better quality of pattern can be made. |
| 저자 | 김진백1, 서지수2 |
| 소속 | 1한국과학기술원 화학과, 2분자과학사업단(BK21) & 기능성고분자연구센터 |
| 키워드 | lithography; silicon surfactant; crosslinking |
