| 초록 |
Electronic industry such as display, solar cell, and ultra large scale integration (ULSI) device requires low dielectric constant (low-K) materials for the power consumption and signal propagation delay time. The low K materials have been made from thermal silicon dioxide, which has dielectric constant of 3.9~4.2. Furthermore, many researchers have developed organic and inorganic materials to reduce K value. However, the new dielectric materials have some problems such as thermally stability, metal diffusion and ion diffusion into the dielectric. Polyphenylcarbosilane (PPCS), which Si–C bonds build up the backbone of the polymer, has been previously investigated as silicon carbide and low-k materials. Therefore, we have attempted to make the thick films, which are silicon dioxide and other silicon containing dielectric materials such as SiO2 and SiOxCy, from PPCS in oxygen atmosphere during firing. The electron spectroscopy of chemical analysis (ESCA) was used to investigate the bonding which is Si-O, Si-O-C, Si-C, in the thick films as a function of firing temperature. The thick films of PPCS were investigated for thermal property by TG-DTA. Based on our result, the plenty of oxygen was substituted for the phenyl group in the PPCS during firing. The PPCS holds considerable promise for the application of low K dielectric in the next generations of high performance electric device |
