| 학회 |
한국화학공학회 |
| 학술대회 |
2008년 가을 (10/23 ~ 10/24, 부산 BEXCO) |
| 권호 |
14권 2호, p.3406 |
| 발표분야 |
재료 |
| 제목 |
Growth Of Highly Branched SiC Nanowires With SiO2/C Pellet by Carbothermic Reduction |
| 초록 |
Highly branched SiC nanowires were synthesized by direct carbothemral reduction with SiO2-C pellets at 1400oC. The extensive morphological properties revealed that the high-density branched structures of SiC nanowires were incorporated by a direct carbothermic reduction of SiO2-C pellets. The diameter of the grown SiC nanowires are about 100150nm and length is about 600-800 nm. The grown SiC nanowires were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), Raman and X-ray diffraction (XRD). These investigations confirm the grown SiC nanowires are a cubic β-SiC. It was found that the density and quality of SiC nanowires increased as increasing the temperature of arc furnace. The formation process and growth mechanism of the β -SiC nanowires is analyzed and discussed briefly. |
| 저자 |
이현철, Mohammad Shaheer Akhtar, 곽도환, 양오봉
|
| 소속 |
전북대 |
| 키워드 |
Silicon Carbide; Carbothermic reduction
|
| E-Mail |
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| 원문파일 |
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