| 초록 |
There have been many efforts to achieve high performance of vacuum- and/or solution-processed organic field-effect transistors(OFETs). One of the key controlling factors is to introduce the organic-compatible surfaces, where organic semiconductors tend to grow into highly conjugated crystals. Recently, we reported that end-functionalized polystyrenes(PSs) can be chemically coupled onto various hydroxyl surfaces and the PS-coupled dielectrics enhance the resulting OFETs. Here, oxide dielectric surfaces were modified with end-functionalized PSs containing different chain lengths and narrow PDI(＜ 1.2). The PS-coupled oxide layers were used as gate dielectrics for TES-ADT and TIPS-PEN. The coupling densities of PS chains on the oxide surfaces changed performance of these OFETs. Via optimizing the PS-coupling density, TES-ADT OFETs showed high electrical performance without any hysteresis: mobility of up to 1.8 cm2/Vs, threshold voltage of -1V, on/off current ratio of up to 107. |
