| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Fluorine-rich polymer gate dielectrics for highly stable organic field effect transistors(OFETs) against gate bias stress |
| 초록 |
Bias stress instability is one of the most critical issues to realize stable organic field-effect transistors (OFETs). In this study, three of thin organic gate dielectric is used to modify the surface characteristics of dielectrics. Small molecule semiconductor-based OFETs (Bottom gate, Top contact) are fabricated and continuous gate bias stress (-40V) is applied to evaluate the stability. The device modified by CYTOP shows much higher stability in ambient conditions than other devices which consist of polystyrene and octadecyltrichlorosilane gate dielectrics. It is because the charge trapping is reduced by the hydrophobic surface which minimizes the diffusion of polar contents including water vapor through the interface between the semiconductor and the gate dielectrics. |
| 저자 |
김경훈, 안태규, 김지예, 박세열, 박찬언
|
| 소속 |
포항공과대 |
| 키워드 |
Gate bias instability; Organic Field Effect Transistors; CYTOP; Polystyrene; Octadecyltrichlorosilane
|
| E-Mail |
|
