| 초록 |
Single crystal silicon wafer is the most in demand and contact layer with low contact resistance formed at low temperature is need to reduce resistance loss and improve efficiency of silicon solar cell. Among many contact materials, Ni-P contact scheme was used because it could be deposited by electroless deposition and had low work function. In this paper, the effect of annealing process on the electrical and crystal properties was investigated by means of various resistivity measurements(C-TLM, 4 point probe), glancing incidence X-ray diffraction(GIXRD), and X-ray photoelectron spectroscopy. These results provide a better understanding of the relation between the chemical transformations and the electrical properties of the Ni-P/Si system. |
