| 학회 | 한국재료학회 |
| 학술대회 | 2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 | 11권 2호 |
| 발표분야 | 전자재료 |
| 제목 | ZnO 성장을 위한 Atomic layer deposition법에서 공정온도가 박막의 구조적 광학적 특성에 미치는 영향 |
| 초록 | Atomic layer deposition (ALD) is a very promising deposition technique for compound semiconductor films such as ZnO. However, there have been very few reports on ZnO-ALD. Effects of substrate temperature in both ALD and post annealing on the microstructure and PL properties of ZnO thin films was investigated using X-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM) analysis techniques. The ALD window is found to be 130-180℃. The ZnO film growth rate in ALD increases as the substrate temperature increases in the temperature range except the temperature window. The crystal quality depends most strongly upon the substrate temperature among all the process parameters of ALD. The crystallinity of the ZnO thin film is improved by increasing the process time per ALD cycle or doing post-annealing treatment. The grain size of the ZnO film tends to increase and the grain shape tends to change from a worm-like longish shape to a round one as the annealing temperature increases from 600 to 1,000℃. |
| 저자 | 임종민, 조용준, 이종무 |
| 소속 | 인하대 |
| 키워드 | atomic layer deposition; photoluminescence |
