| 초록 |
In the international technology roadmap for semiconductor(ITRS), ultra low dielectric constant materials below 2.1 are required. Low dielectric materials have to meet low dielectric constant below 2.1 and adequate mechanical strength compatible to semiconductor process such as chemical mechanical planarization(CMP). The most promising candidate material is porous organosilicate film. To achieve these requirement, it needs to control pore structure by adjusting compatibility between a matrix and a porogen material. In this study, gemini surfactant with silica head groups is used as a pore generating material. The dielectric constant and mechanical properties of porous low dielectric films were investigated. Dielectric constants were measured using metal-insulator-silicon(MIS) method. Mechanical properties of porous low dielectric films were measured using depth-sensing indentation experiments. Chemical structures were characterized using FT-IR. Average pore size were measured using small angle neutron scattering (SANS) and x-ray porosimetry. |
