| 학회 |
한국화학공학회 |
| 학술대회 |
2009년 가을 (10/22 ~ 10/23, 일산 KINTEX) |
| 권호 |
15권 2호, p.2107 |
| 발표분야 |
재료 |
| 제목 |
Growth of Cu metal films at room temperature using catalyzed reactions |
| 초록 |
Cu interconnects in semiconductor devices are manufactured by an electroplating technique with a thin physical vapor deposited (PVD) Cu seed layer. Electroplating requires a conductive substrate and, in principle, electrodeposition could proceed directly on top of the diffusion barrier; however, in practice, a thin Cu seed layer is first deposited on the barrier layer. This seed layer is important because, in addition to improving adhesion, it also influences the nucleation and crystallographic texture of the electrodeposited Cu. Hence, atomic layer deposition (ALD) of Cu has attracted considerable attention as an alternative. In this paper, we report a method for growing Cu metal films even at room temperature by catalyzing the surface reactions. The organic base pyridinewas chosen as the catalyst because it strongly interacts with the Cu metal atoms in the Cu precursor molecules adsorbed on the surface and it is a stable molecule. We also performed density-functional calculations for a complete understanding of the theoretical bonding state or structural changes when a Cu metal in Cu(hfac)2 interacts with pyridine (Lewis base) on the surface. |
| 저자 |
강상우1, 서경천1, 신재수2, 윤주영1, 장윤희3
|
| 소속 |
1한국표준과학(연), 2대전대, 3한국화학(연) |
| 키워드 |
Cu ALD; catalyzed reaction;
|
| E-Mail |
|
| 원문파일 |
초록 보기 |
