| 학회 |
한국재료학회 |
| 학술대회 |
2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 |
18권 2호 |
| 발표분야 |
F. 광기능/디스플레이 재료(Optical Funtional and Display Materials) |
| 제목 |
Improvement of electroluminescence in CdSe quantum dots LED by using indium gallium zinc oxide charge transport layers |
| 초록 |
The unipolar quantum dots lighting emitting device (QD-LED) in the charge transport layers that sputter-deposited metal oxides, which are chemically and morphologically stable in air, can be operated without packaging. At charge transport layers, Wood, V. et al. chose zinc tin oxide (ZTO). But it is difficult to hole injection to the QD because of large band gap of ZTO layer. In this work, we demonstrated that unipolar devices can QD emission in transparent indium gallium zinc oxide (IGZO) layer. And these devices are easy for hole injection to the QD because of lower energy level at valence band than ZTO film. Moreover, Electrical and optical properties are very similar with ZTO film. We also grew various IGZO films which have different carrier concentrations to control the balance of hole and electron carriers. And we demonstrated devices used IGZO film at the lowest -1x1014cm-3 carrier concentration with peak luminance of 26Cd/m2. Electrical properties measured by Hall-effect measurement and electroluminescence properties of QD-LEDs measured by electron luminescence spectroscope will be discussed. |
| 저자 |
Sung-lyong Yoon1, Minhyon Jeon2, Jeon-Kook Lee3
|
| 소속 |
1Interface Control Research Center, 2Korea Institute of Science and Technology, 3Seoul |
| 키워드 |
Quantum dot LEDs; Indium Gallium Zinc Oxide; Carrier concentration; Electroluminescence
|
| E-Mail |
|
