| 초록 |
We demonstrated flexible vertical transistors and logic gates based on the graphene-organic semiconductor heterostructures and ion gel gate dielectrics. The current was modulated by tuning the Schottky barrier height across the graphene-semiconductor junction with the application of the gate bias. P-type pentacene and n-type PTCDI-C8 were utilized for vertical transistors. Ion gel gate dielectrics were applied to modulate the wok function of the graphene, which yielded the sub-1V operation. The devices exhibited excellent performances including low-voltage operation with a high current density and on/off current ratio. Furthermore, the logic gates such as the complementary inverter, NAND, and NOR were fabricated onto plastic substrate. The simple, scalable, and room-temperature deposition of both organic semiconductors and gate dielectrics integrated with transparent and flexible graphene opens up new opportunities to realize transparent, flexible, and low-power organic electronics. |
