| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Metal salt-derived Zn–Sn-O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, high performance oxide transistors |
| 초록 |
We report the previously unrecognized co-solvent, formamide (FA), which can comprehensively improve both the device performance and bias stability of metal salt-derived, solution-processed Zn–Sn-O (ZTO) TFTs. By incorporating FA in ZTO precursor solutions, the chemical structures are tailored adequately for reducing the content of hydroxide and encouraging the oxygen vacancy formation, which has not been fulfilled in conventional chemical/physical approaches. Owing to such distinct chemical structural evolution, the field-effect mobility is enhanced dramatically by a factor of 1.9 (from 4.1 to 7.8 cm2 V-1 s-1), and the threshold voltage shift during a positive-bias stress test is suppressed effectively by a factor of 2.3 (from 7.6 to 3.3 V) for unpassivated devices. |
| 저자 |
SeongJip Kim1, Eun Jung Lee2, Beyong-Hwan Ryu1, Sunho Jeong1, Youngmin Choi1
|
| 소속 |
1Korea Research Institute of Chemical Technology, 2Korea Research Institute of Chemical Techology |
| 키워드 |
Zn-Sn-O semiconductor; solution-processed; transistor
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| E-Mail |
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