| 학회 |
한국화학공학회 |
| 학술대회 |
2007년 가을 (10/26 ~ 10/27, 한국과학기술원) |
| 권호 |
13권 2호, p.2313 |
| 발표분야 |
재료 |
| 제목 |
The effect of nitrogen flow rates on the bond structures and mechanical property of amorphous carbon nitride films |
| 초록 |
Amorphous carbon nitride (a-CN) films were deposited onto Si(100) substrates at room temperature by plasma enhanced chemical vapor deposition (PECVD) with different nitrogen flow rate. The gas mixtures of CH4 and N2 were used for carbon and nitrogen sources, respectively. FT-IR spectra showed various bond structures such as C-N (~ 1100 cm-1), C=N (~ 1600 cm-1), and C≡N (~ 2200 cm-1) in as-deposited a-CN films. Especially, an increase in N2 flow rate led to a decrease in the intensity of the triple bond (C≡N). The Raman-scattering spectra showed D band (D is attributed for disorder) at 1380 cm-1 and G band (G is referred for graphite) at 1580 cm-1. Raman spectra indicated that the bond structures change to graphite like structure with increasing N2 flow rate. This graphitization of the films structures leads to a decrease in the film hardness from ~ 9.8 to ~ 8.8 GPa. And, the decrease of triple bond intensity also effects on the film hardness. |
| 저자 |
김상훈, Umar Ahmad, 박용규, 김진환, 김정현, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
amorphous carbon nitride films; a-CN; PECVD
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| E-Mail |
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| 원문파일 |
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