| 초록 |
We report on the organic-inorganic hybrid ambipolar field-effect transistor (FET) device comprised of ZnO nanowire and 6-13, Bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene) on a SiO2/p+-Si substrate. Charge injection to both n-channel and p-channel is always problematic due to work function mismatch of either one. In this study, we suggest three different layers of electrode for hole and electron injection, and oxidation protecting layer between them. Ti and Au are good candidates for carrier injection, and Ni serves as Ti oxidation protecting layer. Our ambipolar FET shows reasonable performance, 35 cm2/Vs and 0.03 cm2/Vs for electron and hole mobility, respectively, which is compared to recent researches. We demonstrate inverter by connecting ambipolar FET with TIPS-pentacene unipolar FET. It shows the maximum gain of ~ 20 at Vdd of –20 V. Photo-electric response under monochromatic visible light will be also discussed. |
