| 학회 |
한국화학공학회 |
| 학술대회 |
2013년 가을 (10/23 ~ 10/25, 대구 EXCO) |
| 권호 |
19권 2호, p.1856 |
| 발표분야 |
재료 |
| 제목 |
Characterization of low-temperature solution-processable SiO2 with precursors as the gate dielectrics |
| 초록 |
Solution-processable silica sols were synthesized from silica nanoparticle and three types of organoalkoxysilanes using sol-gel reaction. Dielectrics were formed using spin coating procedures and cured at 150 °C for 1 h. The Si-O-Si networks between silica nanoparticle and organoalkoxysilanes were observed using Fourier transform infrared spectroscopy. The hydrophobic dielectric surface was formed from organoalkoxysilane containing methyl group. The film shrinkage formed from organoalkoxysilane including phenyl group was lowest. Capacitance-voltage (C-V) and current-voltage (I-V) behavior of the aluminum/dielectrics/p-Si MIS (Metal-insulator-semiconductor) structures were studied with various alkyl group contained organoalkoxysilanes. Organoalkoxysilanes with different alkyl group affected the dielectric property. The annealing effects of low-temperature solution-prodessable SiO2 on the electronics behaviors were studied. |
| 저자 |
나문경, 이시우
|
| 소속 |
포항공과대 |
| 키워드 |
Gate dielectrics; Solution process; Silicon oxide
|
| E-Mail |
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| 원문파일 |
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