| 학회 |
한국화학공학회 |
| 학술대회 |
2010년 봄 (04/22 ~ 04/23, 대구 EXCO) |
| 권호 |
16권 1호, p.849 |
| 발표분야 |
재료 |
| 제목 |
Synthesis of SiC nanowires by direct microwave irradiation |
| 초록 |
We report a method for the synthesis of SiC nanowire by direct microwave irradiation on the Si substrate under H2 and CO atmosphere at 1 atm. 3C-SiC structures were grown on the Si wafer through this synthetic method. Transmission electron microscopy shows that the nanowires are around 20 nm in diameter. High resolution transmission electron microscopy reveals that the nanowires are crystalline 3C-SiC nanowire. Raman spectra show the typical features of nano-sized SiC. This method requires a short reaction time (2 min). The results of this research allow us to propose the growth mechanism of SiC nanowires on the Si substrate by direct microwave irradiation. |
| 저자 |
오유진, 이재근, 이건홍
|
| 소속 |
포항공과대 |
| 키워드 |
SiC nanoiwre; short reaction time; direct microwave irradiation
|
| E-Mail |
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| 원문파일 |
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