| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
TFT device reliability improvement of the IGZO base oxide semiconductor by the Ca element addition |
| 초록 |
The mass production application of the oxide film transistor reaches for high- definition TFT-LCD for Display and large area AMOLED, and the active research and development by it advance recently. Such an oxide film transistor has characteristics such as high mobility, low process temperature, but has the problems that must be solved such as the reliability of the element, the optimization of After Process still more. The application of a Cu electrode having high mobility more than 30cm2/Vs and low specific resistance is necessary in Panel for high definition (UDH grade) more than 4K in particular, but a drop of the element reliability by diffusion of Cu element in the interface of a Cu electrode and the oxide semiconductor and the formation of the layer of Cu-O must improve it. If I consider an oxide semiconductor and a correlation with behavior of Cu element in the Cu S/D electrode interface and the element reliability having InGaZnO (IGZO) film Chanel through a TFT electrical characteristic and interface characteristic in this study and am going to push forward the reliability of the element through the formation of barrier layer in the interface by the addition of Ca element, there is a purpose. |
| 저자 |
오동주1, 김신1, 이상호1, 한동석2, 박종완2, 황아영3, 정재경3
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| 소속 |
1한국알박 초재료(연), 2한양대, 3인하대 |
| 키워드 |
IGZO; Cu-Ca; Barrier Layer; Cu-O
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| E-Mail |
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