| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 | Effect of softbake temperature on photochemical-annealed IGZO thin film transistors |
| 초록 | Flexible electronic components are essential for the development of mechanically flexible functional system, which would allow new applications in electronics, biotechnology, energy and sensing. Solution-processed oxide semiconductors could meet the requirement of high-performance flexible platform while also achieving a continuous drive for cost reduction. Photochemical activation route for solution-processed IGZO thin film attracted much attention due to its capability of device fabrication at low temperature. In photochemical activation using deep ultraviolet (DUV) rays, solvents and organic species within metal precursors should be effectively removed for dense metal-oxide-metal network formation, consequently leading to high performance operation of transistors. Unlike a thermal annealing process, however, adequate amount of oxygen-containing solvent is also necessary prior to DUV photoanneal for relevant photochemistry. So, we varied a softbake temperature to optimize the preconditions for DUV-annealed IGZO thin film transistors. It was found that the performances of IGZO TFTs strongly depend on the softbake temperature. Details of experiment procedures and results will be discussed at the meeting. |
| 저자 | 김재균1, 김영훈2, 박성규1 |
| 소속 | 1중앙대, 2성균관대 |
| 키워드 | Oxide semiconductor; photochemical activation |
