| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 가을 (10/09 ~ 10/10, 일산킨텍스) |
| 권호 |
33권 2호 |
| 발표분야 |
고분자 합성 |
| 제목 |
Synthesis of ArF photoresist by reversible addition-fragmentation chain transfer (RAFT) polymerization |
| 초록 |
ArF lithography is a promising technology to get fine patterns less than 100nm. And synthesis of superior ArF photoresist is an essential step for developing ArF lithography technology. ArF photoresist can be prepared by radical polymerization of some methacrylate monomers with lithography functionalities. For low PDI and controlled composition polymer, living radical polymerization can be applied. Among several living radical polymerization methods, reversible addition-fragmentation transfer (RAFT) polymerization is the most appropriate method because of absence of metal catalyst, and adaptability to various monomers. ArF photoresist was synthesized by reversible addition-fragmentation transfer (RAFT) polymerization. Three well known ArF monomers were polymerized randomly with 2-cyanopropyl dithionaphthalene (CPDN) as chain transfer agent, and the RAFT agent was synthesized in this laboratory. Syntheses of CPDN and polymer were confirmed by 1H-NMR. Also monomer composition of polymer was check by 1H NMR. Molecular weight and PDI of polymer were checked by GPC. |
| 저자 |
손해성1, 차상호1, 이원기1, 이종찬1, 김영호2, 윤효진2, 김명선2, 백세경2
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| 소속 |
1서울대, 2삼성전자(주) |
| 키워드 |
polythiophene; gold nano composite
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| E-Mail |
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