| 학회 |
한국공업화학회 |
| 학술대회 |
2009년 봄 (04/15 ~ 04/17, 호텔인터불고(대구)) |
| 권호 |
13권 1호 |
| 발표분야 |
고분자 |
| 제목 |
Synthesis of ArF photoresist via reversible addition-fragmentation chain transfer (RAFT) polymerization |
| 초록 |
ArF(193 nm) lithography is a predominant technique for patterns less than 100 nm, and the synthesis of photoresist is one of the most important factors in ArF lithography. ArF(193 nm) photoresist composed of three different methacrylate monomers was synthesized via reversible addition-fragmentation transfer (RAFT) polymerization.Kinetic study was done, and several characteristics such as molecular weight and PDI were checked. |
| 저자 |
손해성1, 차상호1, 이원기1, 이종찬1, 김명선2, 윤효진2, 백세경2, 김수경2, 함지윤2, 김영호2, 채승기2, 이준경3, 이재우3, 김재현3
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| 소속 |
1서울대, 2삼성전자(주), 3동진쎄미켐(주) |
| 키워드 |
RAFT; ArF photoresist
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| E-Mail |
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