| 학회 | 한국재료학회 |
| 학술대회 | 2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 | 11권 2호 |
| 발표분야 | 나노 및 생체재료 |
| 제목 | Tetramethylsilane에 의한 SiC 박막의 특성평가 |
| 초록 | Silicon carbide is an important material with potential for high-temperature, high-frequency and radiation-resistant device applications. Furthermore, SiC can also be used as high-efficiency light-emitting diodes for the short-wave region of the visible spectrum and detectors of ultraviolet radiation, or as a wide window material to enhance the conversion efficiency of solar cells. All these applications are based on unique properties of SiC, such as the wide band gap, high electron mobility, high thermal conductivity, and high melting point. SiC films were prepared by chemical vapor deposition (CVD) with single precursor of Tetramethylsilane(TMS) at relatively low deposition temperature. after deposition, the structure of SiC film was characterized with X-ray diffraction, transmission electron microscopy (TEM) and infrared spectroscopy (IR). This research was supported by a grant(code #: 05K1501-01210) from ' Center For Nanostructured Materials Technology' under ' 21st Century Frontier R&D Programs' of the Ministry of Science and Technology, Korea |
| 저자 | 김나리1, 김재수2, 노대호2, 이재훈3, 안명원4, 변동진1 |
| 소속 | 1고려대, 2한국과학기술(연), 3한국생산기술(연), 4대진대 |
| 키워드 | SiC film; tetramethylsilane; APCVD |
