| 학회 | 한국재료학회 |
| 학술대회 | 2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 | 14권 2호 |
| 발표분야 | 에너지환경재료 |
| 제목 | Microstructure of Cu(In,Ga)Se2 Thin Film Prepared by Selenization of Metallic and Selenide Precursors and its Application to Solar Cells |
| 초록 | Microstructure of Cu(In,Ga)Se2 Thin Film Prepared by Selenization of Metallic and Selenide Precursors and its Application to Solar Cells Jong Chul Lee1, Min Sik Kim1, R.B.V. Chalapathy1, Jae Ho Yun2, Byung Tae Ahn1,* 1Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, Republic of Korea 2Solar Cells Research Center, Korea Institute of Energy Research, 102 Gajeongro, Yuseong-gu, Daejeon 305-343, Republic of Korea Thin film solar cells based on Cu(In,Ga)Se2 (CIGS) continue to be a leading candidate for thin film photovoltaic devices due to its bandgap, high absorption coefficient, long-term stable performance and potential for low-cost production. Many groups have reported within the past years on a variety of processes for preparing CIGS films. Up to date, the most successful technique for deposition of CIGS absorber layer for the highest efficiency solar cells has been based on Cu, In, Ga and Se co-evaporated process, so-called 3-stage process, achieving an efficiency of greater than 19 %. However 3-stage evaporation process is difficult to scale-up for large area, economic manufacture. The selenization process has been a promising method for a low cost and large scale production of high quality CIGS film. In conventional selenization process, the sputtered precursor with alloyed or stacked metallic Cu-In-Ga layers is deposited on the substrate and it is followed by selenization process in toxic H2Se ambient gas. However The CIGS films had the poor microstructure when the metal layers were annealed in a Se vapor atmosphere. In this study, we prepared a precursor which is a mixture of metals and Cu2-xSe selenide compound on Mo-coated soda-lime glass by sputtering. The precursors were selenized to form CIGS film using Se vapor in a vacuum evaporation system without H2Se ambient gas. The microstructure of the CIGS films was investigated with various Cu contents and deposition temperatures. And the CIGS films were applied to the fabrication of solar cell with an Al/n-ZnO/i-ZnO/CdS/CIGS/Mo/glass structure and its photovoltaic properties were characterized. The details will be reported in the meeting. * Corresponding author. E-mail address: [email protected] |
| 저자 | 이종철1, 김민식1, chalapathy2, 윤재호3, 안병태2 |
| 소속 | 1KAIST, 2kaist, 3한국에너지기술(연) |
| 키워드 | CIGS 태양전지 |
