| 초록 |
Highly transparent polythiophene(PT) thin-films were successfully synthesized by the plasma polymerization of thiophene. These films are doped and etched with O2 plasma by in-situ doping technique. Plasma polymerized PT films were deposited at about 50 to 340nm/min depending on the temperatures and plasma power. The resultant transparency was as high as 85%. Plasma polymerized PT films exhibited characteristics as insulator or semiconductor (1010~12Ω/□, 10-7S/cm). The conductivity was immediately increased up to 106Ω/□, 10-2S/cm with O2 plasma doping. Specifically, there films are solvent-free, pinhole-free, homogeneous and good adherent. |
