| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | B. Nano materials and processing Technology(나노소재기술) |
| 제목 | Flexible graphene transistors with ion gel dielectric layer |
| 초록 | Graphene is attractive material for various applications including display, solarcell and sensor. The recent study on graphene shows that it is good candidate for high frequency device. There are two different methods to make graphene devices over large area: one that grows graphene on SiC insulating wafer and another that transfer graphene synthesized on metal catalyst. The latter approach is attractive because many kinds of substrates are available including flexible PET and stretchable elastomer substrates. However, there is significant challenge which is that high capacitance gate dielectric deposition process requires high temperature. Here, we propose a simple method to fabricate graphene FET on PET substrates using high capacitance solid polymer electrolytes as a gate insulator. The ion gel is composed of two materials which are ionic liquid and gelating triblock copolymer and it exhibits high capacitance value of over 5Fcm-2. Such high capacitance makes low operation voltage of the devices, which is desirable for flexible electronics. |
| 저자 | 장호욱1, 김범준1, 이승기2, 홍병희1, 조정호3, 안종현2 |
| 소속 | 1성균관대, 2숭실대, 3신소재공학부 화학과 |
| 키워드 | Graphene; Ion gel; field effect transistor; flexible; low-voltage |
