| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
분자전자용 소재 및 소자 |
| 제목 |
Low-voltage, Solution-processable Graphene Transistors based on Chemically and Solvothermally Reduced Graphene Oxide |
| 초록 |
We developed the solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. Combining solution-processed high capacitance ion gel gate dielectrics with spray-coated RGO films yields high performance RGO transistors with the high on-current operation below 4 V. Two reduction processes were applied to GO: i) chemical reduction by GO-hydrazine dispersion and ii) solvothermal reduction of GO suspension in N-methyl-2-pyrrolidone (NMP). Chemically recued GO exhibits better transistor performance than that of solvothermally reduced one.Chemical reduction of GO delocalizes charge carriers more efficiently and increases the number of localized states near EF at low temperatures, compared to the solvothermal reduction. Furthermore, the optimum hopping distance of charge carriers is longer in chemically reduced GO. |
| 저자 |
김범준1, Viet Hung Pham2, 허승현2, 조정호1
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| 소속 |
1숭실대, 2울산대 |
| 키워드 |
reduced graphene oxide; solution process; ion gel; field effect transistor; low-voltage operation
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| E-Mail |
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