| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Surface modification of polyimide gate insulators using a metal oxide buffer layer for solution-processed oxide thin-film transistors |
| 초록 |
Recently, high-performance, solution-processable metal oxide thin-film transistors (TFTs) have been extensively studied. For applications in low-cost and printed electronics, gate insulators should also be solution-processable. The polymeric gate insulator could be one of attractive candidates for solution-processed oxide TFTs. However, in general, polymeric gate insulators are damaged during the post-annealing process for the deposition of the oxide semiconductor layer. In this study, we have designed the polyimide gate insulator during the post-annealing process, we introduced metal oxide buffer layer on the gate insulator. We prepared solution-processed oxide TFTs with the buffer-layer-deposited polyimide gate insulators. The TFTs showed excellent performance. |
| 저자 |
위두영1, 김윤호1, 가재원1, 김진수1, 안택2, 이미혜1, 장광석1
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| 소속 |
1한국화학(연), 2경성대 |
| 키워드 |
Organic gate insulator; thin-film transistors; solution-processed oxide TFTs; polyimide
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| E-Mail |
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