| 학회 | 한국재료학회 |
| 학술대회 | 2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 | 15권 2호 |
| 발표분야 | C. Energy and the Environment(에너지 및 환경재료) |
| 제목 | Effect of Annealing Temperature on CIS2 Thin Films deposited by Continuous Flow Reactor |
| 초록 | Chalcopyrite semiconductors have received a great attention for electronic and optoelectronic applications. Among chalcopyrite materials, copper indium disulphide (CuInS2) drew a serious attention as a light absorbing material for the thin film solar cell because of its high optical absorption coefficients, optimum band gap energy, and versatile optical and electrical characteristics. The direct band gap of CuInS2 is about 1.5 eV and its value is near to the theoretical optimum conversion efficiency of solar cells. Up to now, several methods based on the gas phase deposition have been used for the formation of polycrystalline thin films of CuInS2. Those technologies, however, cause the high production costs due to their requirements of the expensive vacuum systems and the high temperature conditions. A low cost deposition method is needed for the synthesis of the CuInS2 thin films. Solution-based chemical deposition processes have many significant advantages due to their low cost and low temperature processing natures. Those processes can be used to fabricate large area thin films on various substrates. In this study, the highly uniform CuInS2 thin films were successfully synthesized by a continuous flow reactor (CFR), which is a novel solution-based deposition process based on the concept of combining chemical bath deposition and spray pyrolysis. We also investigated the effects of annealing temperature on surface morphology, crystallinity, and chemical composition of CuInS2 thin films in the range of 200~400℃. A scanning electron microscope (SEM) was employed to examine the surface morphology of the polycrystalline CuInS2 thin film. The optical property was measured using a UV-visible spectrophotometer. The energy band gap of the prepared thin films ranged from 1.6 eV to 2.0 eV. An X-ray diffraction spectrometer (XRD) was used for the structural analysis of CuInS2. The atomic concentration for copper, indium, and sulfur in the film was determined from EDX measurement. |
| 저자 | 박미선, 류시옥, 이태진 |
| 소속 | 영남대 |
| 키워드 | solar cell; CuInS2; solution method |
