| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Characteristics of Multilayer MoSe2 Field-Effect Transistors and Effect of Al2O3 Encapsulation Layers on MoSe2 FETs |
| 초록 |
Transition metal dichalcogenides such as MoSe2 have attracted great attention due to their desirable properties for electronic and optoelectronic applications. MoSe2 field-effect transistors (FETs) showed promising device characteristics such as high on/off ratio (106) and field-effect mobility (50-200 cm2/Vs). However, strategies to optimize device performance have not been established yet. In this research, we explore the possibility of improving MoSe2 FET performance using atomic-layer-deposited Al2O3 encapsulation layers on MoSe2 channels. By comparing the effect of Al2O3 layers on the device characteristics of bottom-gate multilayer MoSe2 FETs, we observe the consistent enhancement of field-effect mobility and current-voltage hysteresis. These results suggest that the deposition of Al2O3 encapsulation layers on top of MoSe2 channel can be an efficient method of optimizing the device performance of MoSe2 FETs. |
| 저자 |
이현아, 최웅
|
| 소속 |
국민대 |
| 키워드 |
MoSe2; Field effect transistor; 2D materials; Encapsulation
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| E-Mail |
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