| 학회 |
한국화학공학회 |
| 학술대회 |
2009년 봄 (04/23 ~ 04/24, 광주 김대중컨벤션센터) |
| 권호 |
15권 1호, p.882 |
| 발표분야 |
재료 |
| 제목 |
Effects of Annealing Conditions on Characteristics of CuInSe2 Thin Film synthesized by Continuous Flow Reactor System |
| 초록 |
Copper-Indium-Selenium (CuInSe2) is one of the most attractive materials for the absorber layer in the polycrystalline solar cell because of its high absorption coefficient and nondegradable property. In this study, the polycrystalline CuInSe2 thin films were prepared by two different solution-based deposition processes, that is, CFR (Continuous Flow Reactor) and CBD (Chemical Bath Deposition). The CuInSe2 thin film depositions were carried out in the temperature range of 150 ~ 500°C with changing annealing conditions. A series of analysis was performed to investigate their property changes in terms of experimental conditions. X-ray diffraction (XRD) analysis was employed to identify the phases of the obtained thin film. The chemical composition and bonding energy of CuInSe2 were determined with the aids of X-ray photoelectron spectroscopy (XPS). Transmission electron microscopy (TEM) and Scanning electron microscopy (SEM) were used to provide the detailed information of the particle size and structural information and of the surface morphology, respectively. Energy band gap was estimated by UV-vis spectroscopy measurement. |
| 저자 |
김채린1, 이두형1, 박미선1, 이태진1, 류시옥1, Ching-hung Chang2
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| 소속 |
1영남대, 2Oregon State Univ. |
| 키워드 |
태양전지; CIS; CuInSe2; 용액공정; 박막태양전지; photovotaic
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| E-Mail |
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| 원문파일 |
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