| 학회 |
한국고분자학회 |
| 학술대회 |
2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 |
30권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Thermal annealing effects on the performance of Phosphorescent dye doped polymer light emitting diodes |
| 초록 |
We have investigated the effects of thermal annealing on the device performance of green phosphorescent dye doped polymer light emitting diodes (PHPLEDs). The glass transition temperature of polymer and boiling point temperature of solvent is the basis of decision for annealing condition in polymer light emitting diodes(PLEDs). Since small molecules are doped into polymer host as emitting materials, the phase separation between polymer host and small molecular guest should be considered during the fabrication of emitting layer (EML) film. In this paper, we used poly-(N-vinylcarbazole)(PVK) and fac tris(2-phenylpyridine) iridium [Ir(ppy)3] as host and guest materials, respectively. Best device performance (12.4 lm/W at an operating voltage of 5.5 V) is obtained with proper selection of annealing temperature. The annealing effect on the device lifetime will also be discussed. |
| 저자 |
안성국1, 김장주2
|
| 소속 |
1서울대, 2서울대 재료공학부 |
| 키워드 |
annealing; phosphorescent PLED; phase separation
|
| E-Mail |
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