| 초록 |
Paper field effect trasistor with top contact, MISFET structure was fabricated using various patterning and coating techniques. Line patterning was used to make electrical circuit on paper and its patterns were made by Laser printer. Source, drain and gate electrodes were prepared by electroless deposition of metals (Au, Ag, Ni) on paper. Surface resistance of the electrodes were in the range of 20 ohm/sq. ~ 1 Kohm/sq. Polypyrrole doped with dodecylbenzenesulfonic acid and PMMA [poly(methyl metharylate)] were used as active layer and insulating layer, respectively. I-V characteristics were measured and from the results field effect mobility and Ion/Ioff ratio were calculated. |
