| 초록 |
Oxide thin films have attracted great attentions owing to their interesting material properties. Among them, two-dimensional electron gas (2DEG) at perovskite oxide heterostructure has been explored intensively owing to their unique properties, such as LaAlO3 (LAO) and SrTiO3 (STO) heterostructure. It was reported that high density of electrons up to (1013~1014/cm2) were confined at the interface of LAO/STO heterostructure which density is 100 times higher than the conventional semiconductor heterojunction. Recently, it was revealed that the formation of 2DEG at LAO/STO heterostructure is possible by atomic layer deposition (ALD), which implies oxide heterostructure can be realized via mass-production compatible process. The formation of 2DEG at oxide heterostructure will be addressed, and several oxide thin films will be suggested for diverse applications in the presentation. More details will be introduced in the presentation. |
