| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | A research of properties of p-GaN layers after rapid thermal annealing (RTA) treatment |
| 초록 | Because gallium nitride(GaN) is an attractive material which has a wide direct band gap, GaN-based optoelectronic devices such as light emitting diodes(LEDs) and laser diodes (LDs) in blue and ultraviolet wavelength regions have been intensively researched and are also commercially available. In the GaN-based LED fabrication, the p-contact is generally formed by depositing metal layers on p-GaN located at the top of GaN-based LED quantum well structure. However, the performance of such LEDs and lasers remains limited by several problems related to the high resistance ohmic contact to the p-type GaN. Most of the reported methods for reducing p-contact resistance rely on the optimization of the contact annealing temperature and improvement of metal-semiconductor interface. In this study, we growed u-GaN layer on sapphire substrate by metal organic chemical vapor deposition (MOCVD) and then growed p-GaN layer on u-GaN layer by MOCVD. To study of annealing effect on p-GaN layer, we examined the properties of p-GaN layers after rapid thermal annealing (RTA) treatment as various temperatures |
| 저자 | Jihye Kim1, Jaehong Choi1, Donggun Lee1, Junggeun Jhin2, Dongjin Byun1 |
| 소속 | 1Korea Univ., 2Korea Photonics Technology Institute |
| 키워드 | P-GaN; MOCVD; RTA |
